London, Oct 9 : A new phase change material with the potential to change the design of future memory storage devices has been invented by scientists at Singapore ASTAR''s Data Storage Institute (DSI).
Phase change materials can modify their structure between amorphous and crystalline at high speed.
The materials, these days, are used to make Phase change memory (PCM), considered to be the most promising alternative to replace FLASH memory.
Usually, PCM is worked by changing phase change materials'' structure through applying an electric current. But now, phase change can be initiated by means of switching the new phase change materials by using magnetic fields, reports Nature.